TY  - JOUR
AU  - Koch, Vanessa M.
AU  - Charvot, Jaroslav
AU  - Cao, Yuanyuan
AU  - Hartmann, Claudia
AU  - Wilks, Regan G.
AU  - Kundrata, Ivan
AU  - Mínguez-Bacho, Ignacio
AU  - Gheshlaghi, Negar
AU  - Hoga, Felix
AU  - Stubhan, Tobias
AU  - Alex, Wiebke
AU  - Pokorný, Daniel
AU  - Topraksal, Ece
AU  - Smith, Ana-Sunčana
AU  - Brabec, Christoph
AU  - Bär, Marcus
AU  - Guldi, Dirk M.
AU  - Barr, Maïssa K. S.
AU  - Bureš, Filip
AU  - Bachmann, Julien
TI  - Sb 2 Se 3 Thin-Film Growth by Solution Atomic Layer Deposition
JO  - Chemistry of materials
VL  - 34
IS  - 21
SN  - 0897-4756
CY  - Washington, DC
PB  - American Chemical Society
M1  - FZJ-2022-06161
SP  - 9392 - 9401
PY  - 2022
AB  - We establish solution atomic layer deposition (sALD) for the controlled growth of pure Sb2Se3 thin films under mild conditions, namely, room temperature and atmospheric pressure. Upscaling this process yields Sb2Se3 thin films with high homogeneity over large-area (4″) substrates. Annealing of the initially amorphous material leads to highly crystalline and smooth Sb2Se3 thin films. Removing the constraints of thermal stability and sufficient volatility in sALD compared to traditional gas-phase ALD opens up a broad choice of precursors and allows us to examine a wide range of Se2– precursors, of which some exhibit facile synthetic routes and allow us to tune their reactivity for optimal experimental ease of use. Moreover, we demonstrate that the solvent used in sALD represents an additional, attractive tool to influence and tailor the reactivity at the liquid–solid interface between the precursors and the surface.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000883769200001
DO  - DOI:10.1021/acs.chemmater.2c01550
UR  - https://juser.fz-juelich.de/record/916360
ER  -