Journal Article FZJ-2022-06161

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Sb 2 Se 3 Thin-Film Growth by Solution Atomic Layer Deposition

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2022
American Chemical Society Washington, DC

Chemistry of materials 34(21), 9392 - 9401 () [10.1021/acs.chemmater.2c01550]

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Abstract: We establish solution atomic layer deposition (sALD) for the controlled growth of pure Sb2Se3 thin films under mild conditions, namely, room temperature and atmospheric pressure. Upscaling this process yields Sb2Se3 thin films with high homogeneity over large-area (4″) substrates. Annealing of the initially amorphous material leads to highly crystalline and smooth Sb2Se3 thin films. Removing the constraints of thermal stability and sufficient volatility in sALD compared to traditional gas-phase ALD opens up a broad choice of precursors and allows us to examine a wide range of Se2– precursors, of which some exhibit facile synthetic routes and allow us to tune their reactivity for optimal experimental ease of use. Moreover, we demonstrate that the solvent used in sALD represents an additional, attractive tool to influence and tailor the reactivity at the liquid–solid interface between the precursors and the surface.

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Contributing Institute(s):
  1. Helmholtz-Institut Erlangen-Nürnberg Erneuerbare Energien (IEK-11)
Research Program(s):
  1. 1212 - Materials and Interfaces (POF4-121) (POF4-121)

Appears in the scientific report 2022
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Medline ; Creative Commons Attribution-NonCommercial-NoDerivs CC BY-NC-ND 4.0 ; OpenAccess ; Clarivate Analytics Master Journal List ; Current Contents - Engineering, Computing and Technology ; Current Contents - Physical, Chemical and Earth Sciences ; Ebsco Academic Search ; Essential Science Indicators ; IF >= 10 ; JCR ; NationallizenzNationallizenz ; SCOPUS ; Science Citation Index Expanded ; Web of Science Core Collection
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 Record created 2022-12-19, last modified 2024-07-12


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