% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Koch:916360,
      author       = {Koch, Vanessa M. and Charvot, Jaroslav and Cao, Yuanyuan
                      and Hartmann, Claudia and Wilks, Regan G. and Kundrata, Ivan
                      and Mínguez-Bacho, Ignacio and Gheshlaghi, Negar and Hoga,
                      Felix and Stubhan, Tobias and Alex, Wiebke and Pokorný,
                      Daniel and Topraksal, Ece and Smith, Ana-Sunčana and
                      Brabec, Christoph and Bär, Marcus and Guldi, Dirk M. and
                      Barr, Maïssa K. S. and Bureš, Filip and Bachmann, Julien},
      title        = {{S}b 2 {S}e 3 {T}hin-{F}ilm {G}rowth by {S}olution {A}tomic
                      {L}ayer {D}eposition},
      journal      = {Chemistry of materials},
      volume       = {34},
      number       = {21},
      issn         = {0897-4756},
      address      = {Washington, DC},
      publisher    = {American Chemical Society},
      reportid     = {FZJ-2022-06161},
      pages        = {9392 - 9401},
      year         = {2022},
      abstract     = {We establish solution atomic layer deposition (sALD) for
                      the controlled growth of pure Sb2Se3 thin films under mild
                      conditions, namely, room temperature and atmospheric
                      pressure. Upscaling this process yields Sb2Se3 thin films
                      with high homogeneity over large-area (4″) substrates.
                      Annealing of the initially amorphous material leads to
                      highly crystalline and smooth Sb2Se3 thin films. Removing
                      the constraints of thermal stability and sufficient
                      volatility in sALD compared to traditional gas-phase ALD
                      opens up a broad choice of precursors and allows us to
                      examine a wide range of Se2– precursors, of which some
                      exhibit facile synthetic routes and allow us to tune their
                      reactivity for optimal experimental ease of use. Moreover,
                      we demonstrate that the solvent used in sALD represents an
                      additional, attractive tool to influence and tailor the
                      reactivity at the liquid–solid interface between the
                      precursors and the surface.},
      cin          = {IEK-11},
      ddc          = {540},
      cid          = {I:(DE-Juel1)IEK-11-20140314},
      pnm          = {1212 - Materials and Interfaces (POF4-121)},
      pid          = {G:(DE-HGF)POF4-1212},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000883769200001},
      doi          = {10.1021/acs.chemmater.2c01550},
      url          = {https://juser.fz-juelich.de/record/916360},
}