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000916798 1001_ $$0P:(DE-HGF)0$$aRichstein, B.$$b0$$eCorresponding author
000916798 245__ $$aInterface Engineering for Steep Slope Cryogenic MOSFETs
000916798 260__ $$aNew York, NY$$bIEEE$$c2022
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000916798 7001_ $$0P:(DE-Juel1)176845$$aHan, Y.$$b1
000916798 7001_ $$0P:(DE-Juel1)128649$$aZhao, Q.$$b2
000916798 7001_ $$0P:(DE-HGF)0$$aHellmich, L.$$b3
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000916798 7001_ $$0P:(DE-HGF)0$$aScholz, S.$$b5
000916798 7001_ $$0P:(DE-Juel1)172641$$aSchreiber, Lars$$b6$$ufzj
000916798 7001_ $$0P:(DE-HGF)0$$aKnoch, J.$$b7
000916798 773__ $$0PERI:(DE-600)2034325-5$$a10.1109/LED.2022.3217314$$gVol. 43, no. 12, p. 2149 - 2152$$n12$$p2149 - 2152$$tIEEE electron device letters$$v43$$x0193-8576$$y2022
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