Journal Article

FZJ-2023-00101

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Interface Engineering for Steep Slope Cryogenic MOSFETs

Richstein, B. (Corresponding author)RWTH* ; Han, Y.FZJ* ; Zhao, Q.FZJ* ; Hellmich, L.RWTH* ; Klos, J.FZJ* ; Scholz, S.RWTH* ; Schreiber, L.FZJ*RWTH* ; Knoch, J.RWTH*

2022
IEEE New York, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/33851  doi:10.1109/LED.2022.3217314

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. JARA-FIT (JARA-FIT)

Research Program(s):

1. 5224 - Quantum Networking (POF4-522) (POF4-522)
2. 5222 - Exploratory Qubits (POF4-522) (POF4-522)
3. 5221 - Advanced Solid-State Qubits and Qubit Systems (POF4-522) (POF4-522)
4. DFG project 422581876 - Kryogene CMOS Technologie für die Realisierung von von klassischen QuBit-Kontrollschaltkreisen (422581876)

Appears in the scientific report 2022

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Database coverage:
; ; Clarivate Analytics Master Journal List ; Current Contents - Electronics and Telecommunications Collection ; Current Contents - Engineering, Computing and Technology ; Essential Science Indicators ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index Expanded ; Web of Science Core Collection

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