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@ARTICLE{Richstein:916798,
      author       = {Richstein, B. and Han, Y. and Zhao, Q. and Hellmich, L. and
                      Klos, J. and Scholz, S. and Schreiber, Lars and Knoch, J.},
      title        = {{I}nterface {E}ngineering for {S}teep {S}lope {C}ryogenic
                      {MOSFET}s},
      journal      = {IEEE electron device letters},
      volume       = {43},
      number       = {12},
      issn         = {0193-8576},
      address      = {New York, NY},
      publisher    = {IEEE},
      reportid     = {FZJ-2023-00101},
      pages        = {2149 - 2152},
      year         = {2022},
      cin          = {PGI-9 / JARA-FIT},
      ddc          = {620},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {5224 - Quantum Networking (POF4-522) / 5222 - Exploratory
                      Qubits (POF4-522) / 5221 - Advanced Solid-State Qubits and
                      Qubit Systems (POF4-522) / DFG project 422581876 - Kryogene
                      CMOS Technologie für die Realisierung von von klassischen
                      QuBit-Kontrollschaltkreisen},
      pid          = {G:(DE-HGF)POF4-5224 / G:(DE-HGF)POF4-5222 /
                      G:(DE-HGF)POF4-5221 / G:(GEPRIS)422581876},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000924865400035},
      doi          = {10.1109/LED.2022.3217314},
      url          = {https://juser.fz-juelich.de/record/916798},
}