001     917476
005     20230123101929.0
024 7 _ |a 2128/33683
|2 Handle
037 _ _ |a FZJ-2023-00689
100 1 _ |a Rose, Marc-André
|0 P:(DE-Juel1)172846
|b 0
|e Corresponding author
245 _ _ |a Controlling the electrical properties of oxide heterointerfaces through their interface chemistry
|f - 2022-03-31
260 _ _ |a Jülich
|c 2022
|b Forschungszentrum Jülich GmbH Zentralbibliothek Verlag
300 _ _ |a vi, 162
336 7 _ |a Output Types/Dissertation
|2 DataCite
336 7 _ |a Book
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336 7 _ |a DISSERTATION
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336 7 _ |a PHDTHESIS
|2 BibTeX
336 7 _ |a Thesis
|0 2
|2 EndNote
336 7 _ |a Dissertation / PhD Thesis
|b phd
|m phd
|0 PUB:(DE-HGF)11
|s 1674033285_31241
|2 PUB:(DE-HGF)
336 7 _ |a doctoralThesis
|2 DRIVER
490 0 _ |a Schriften des Forschungszentrums Jülich Reihe Information / Information
|v 89
502 _ _ |a Dissertation, RWTH Aachen University, 2022
|c RWTH Aachen University
|b Dissertation
|d 2022
520 _ _ |a Multiple routes are taken today to improve the processing power of modern computers. Besides software and electrical engineering approaches, high eFFort is taken in improving the most fundamental building block of computers, namely their electronic devices. To enhance the performance of electronic devices, the semiconductor industry applied further and further optimization, driven by a down-scaling approach. The advent of the physical limitation of this approach has led to the search of alternative materials and concepts, which could allow even higher computational performance. Oxides and their interfaces are promising candidates due to their highly diverse and tunable properties. In this context, the LaAlO3/SrTiO3 (LAO/STO) interface sparked high interest, as it possesses an interfacial 2-dimensional electron gas (2DEG), which is a vital partof modern transistor technology (in particular for high-electron-mobility-transistors). However, even though the system has been researched for over a decade, the details of its electronic behavior are still not fully understood. This thesis investigates how the interface chemistry of LAO/STO heterostructures inFLuences the electronic properties of the 2DEG.
536 _ _ |a 5233 - Memristive Materials and Devices (POF4-523)
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|f POF IV
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856 4 _ |u https://juser.fz-juelich.de/record/917476/files/Information_89.pdf
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909 C O |o oai:juser.fz-juelich.de:917476
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910 1 _ |a Forschungszentrum Jülich
|0 I:(DE-588b)5008462-8
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|6 P:(DE-Juel1)172846
913 1 _ |a DE-HGF
|b Key Technologies
|l Natural, Artificial and Cognitive Information Processing
|1 G:(DE-HGF)POF4-520
|0 G:(DE-HGF)POF4-523
|3 G:(DE-HGF)POF4
|2 G:(DE-HGF)POF4-500
|4 G:(DE-HGF)POF
|v Neuromorphic Computing and Network Dynamics
|9 G:(DE-HGF)POF4-5233
|x 0
914 1 _ |y 2022
915 _ _ |a OpenAccess
|0 StatID:(DE-HGF)0510
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915 _ _ |a Creative Commons Attribution CC BY 4.0
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920 1 _ |0 I:(DE-Juel1)PGI-7-20110106
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|l Elektronische Materialien
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980 _ _ |a phd
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980 _ _ |a book
980 _ _ |a I:(DE-Juel1)PGI-7-20110106


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