Book/Dissertation / PhD Thesis

FZJ-2023-00689

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Controlling the electrical properties of oxide heterointerfaces through their interface chemistry

Rose, M.-A. (Corresponding author)FZJ*

2022
Forschungszentrum Jülich GmbH Zentralbibliothek Verlag Jülich

Please use a persistent id in citations: http://hdl.handle.net/2128/33683

Abstract: Multiple routes are taken today to improve the processing power of modern computers. Besides software and electrical engineering approaches, high eFFort is taken in improving the most fundamental building block of computers, namely their electronic devices. To enhance the performance of electronic devices, the semiconductor industry applied further and further optimization, driven by a down-scaling approach. The advent of the physical limitation of this approach has led to the search of alternative materials and concepts, which could allow even higher computational performance. Oxides and their interfaces are promising candidates due to their highly diverse and tunable properties. In this context, the LaAlO3/SrTiO3 (LAO/STO) interface sparked high interest, as it possesses an interfacial 2-dimensional electron gas (2DEG), which is a vital partof modern transistor technology (in particular for high-electron-mobility-transistors). However, even though the system has been researched for over a decade, the details of its electronic behavior are still not fully understood. This thesis investigates how the interface chemistry of LAO/STO heterostructures inFLuences the electronic properties of the 2DEG.

Note: Dissertation, RWTH Aachen University, 2022

---

Contributing Institute(s):

1. Elektronische Materialien (PGI-7)

Research Program(s):

1. 5233 - Memristive Materials and Devices (POF4-523) (POF4-523)

Appears in the scientific report 2022

---

Database coverage:
;

---