%0 Journal Article
%A Gregusova, D.
%A Gazi, S.
%A Sofer, Z.
%A Stoklas, R.
%A Dobrocka, E.
%A Mikulics, M.
%A Gregus, J.
%A Novak, J.
%A Kordos, P.
%T Oxidized Al Film as an Insulation Layer in AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors
%J Japanese journal of applied physics
%V 49
%@ 0021-4922
%C Tokyo
%I Inst. of Pure and Applied Physics
%M PreJuSER-9693
%P 046504
%D 2010
%Z This work was sponsored under projects Slovak Scientific Grant Agency VEGA (Contract Nos. 2/0098/09 and 2/0081/09) and the Slovak Research and Development Agency APVV (Contract Nos. VVCE-0049-07 and 20-026104). The authors would like to thank Mr. P. Elias. for proofreading the manuscript.
%X We report on the technology of a very thin oxidized Al sputtered film used for gate insulation and passivation in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOSHFETs). Their transport properties are presented. The MOSHFET with the Al2O3 layer had improved static output and transfer characteristics compared with the reference heterostructure field-effect transistors (HFETs): (1) their saturation drain current I-DS was similar to 600 mA mm(-1) at gate voltage V-G = 1 V (HFETs with 2.5 mu m gates had similar to 430 mA mm(-1)); (2) their transconductance was 116-140 mS mm(-1) (HFETs had similar to 70 mS mm(-1)). (C) 2010 The Japan Society of Applied Physics
%K J (WoSType)
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000277300700071
%R 10.1143/JJAP.49.046504
%U https://juser.fz-juelich.de/record/9693