Journal Article

PreJuSER-9693

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Oxidized Al Film as an Insulation Layer in AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors

Gregusova, D. ; Gazi, S. ; Sofer, Z. ; Stoklas, R. ; Dobrocka, E. ; Mikulics, M.FZJ* ; Gregus, J. ; Novak, J. ; Kordos, P.

2010
Inst. of Pure and Applied Physics Tokyo

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Please use a persistent id in citations: doi:10.1143/JJAP.49.046504

Abstract: We report on the technology of a very thin oxidized Al sputtered film used for gate insulation and passivation in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOSHFETs). Their transport properties are presented. The MOSHFET with the Al2O3 layer had improved static output and transfer characteristics compared with the reference heterostructure field-effect transistors (HFETs): (1) their saturation drain current I-DS was similar to 600 mA mm(-1) at gate voltage V-G = 1 V (HFETs with 2.5 mu m gates had similar to 430 mA mm(-1)); (2) their transconductance was 116-140 mS mm(-1) (HFETs had similar to 70 mS mm(-1)). (C) 2010 The Japan Society of Applied Physics

Keyword(s): J

Note: This work was sponsored under projects Slovak Scientific Grant Agency VEGA (Contract Nos. 2/0098/09 and 2/0081/09) and the Slovak Research and Development Agency APVV (Contract Nos. VVCE-0049-07 and 20-026104). The authors would like to thank Mr. P. Elias. for proofreading the manuscript.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (IBN-1)
2. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2010

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