TY  - JOUR
AU  - Gregusova, D.
AU  - Gazi, S.
AU  - Sofer, Z.
AU  - Stoklas, R.
AU  - Dobrocka, E.
AU  - Mikulics, M.
AU  - Gregus, J.
AU  - Novak, J.
AU  - Kordos, P.
TI  - Oxidized Al Film as an Insulation Layer in AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors
JO  - Japanese journal of applied physics
VL  - 49
SN  - 0021-4922
CY  - Tokyo
PB  - Inst. of Pure and Applied Physics
M1  - PreJuSER-9693
SP  - 046504
PY  - 2010
N1  - This work was sponsored under projects Slovak Scientific Grant Agency VEGA (Contract Nos. 2/0098/09 and 2/0081/09) and the Slovak Research and Development Agency APVV (Contract Nos. VVCE-0049-07 and 20-026104). The authors would like to thank Mr. P. Elias. for proofreading the manuscript.
AB  - We report on the technology of a very thin oxidized Al sputtered film used for gate insulation and passivation in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOSHFETs). Their transport properties are presented. The MOSHFET with the Al2O3 layer had improved static output and transfer characteristics compared with the reference heterostructure field-effect transistors (HFETs): (1) their saturation drain current I-DS was similar to 600 mA mm(-1) at gate voltage V-G = 1 V (HFETs with 2.5 mu m gates had similar to 430 mA mm(-1)); (2) their transconductance was 116-140 mS mm(-1) (HFETs had similar to 70 mS mm(-1)). (C) 2010 The Japan Society of Applied Physics
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000277300700071
DO  - DOI:10.1143/JJAP.49.046504
UR  - https://juser.fz-juelich.de/record/9693
ER  -