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@ARTICLE{Gregusova:9693,
      author       = {Gregusova, D. and Gazi, S. and Sofer, Z. and Stoklas, R.
                      and Dobrocka, E. and Mikulics, M. and Gregus, J. and Novak,
                      J. and Kordos, P.},
      title        = {{O}xidized {A}l {F}ilm as an {I}nsulation {L}ayer in
                      {A}l{G}a{N}/{G}a{N} {M}etal-{O}xide-{S}emiconductor
                      {H}eterostructure {F}ield {E}ffect {T}ransistors},
      journal      = {Japanese journal of applied physics},
      volume       = {49},
      issn         = {0021-4922},
      address      = {Tokyo},
      publisher    = {Inst. of Pure and Applied Physics},
      reportid     = {PreJuSER-9693},
      pages        = {046504},
      year         = {2010},
      note         = {This work was sponsored under projects Slovak Scientific
                      Grant Agency VEGA (Contract Nos. 2/0098/09 and 2/0081/09)
                      and the Slovak Research and Development Agency APVV
                      (Contract Nos. VVCE-0049-07 and 20-026104). The authors
                      would like to thank Mr. P. Elias. for proofreading the
                      manuscript.},
      abstract     = {We report on the technology of a very thin oxidized Al
                      sputtered film used for gate insulation and passivation in
                      Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructure
                      field-effect transistors (MOSHFETs). Their transport
                      properties are presented. The MOSHFET with the Al2O3 layer
                      had improved static output and transfer characteristics
                      compared with the reference heterostructure field-effect
                      transistors (HFETs): (1) their saturation drain current I-DS
                      was similar to 600 mA mm(-1) at gate voltage V-G = 1 V
                      (HFETs with 2.5 mu m gates had similar to 430 mA mm(-1));
                      (2) their transconductance was 116-140 mS mm(-1) (HFETs had
                      similar to 70 mS mm(-1)). (C) 2010 The Japan Society of
                      Applied Physics},
      keywords     = {J (WoSType)},
      cin          = {IBN-1 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB799 / $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000277300700071},
      doi          = {10.1143/JJAP.49.046504},
      url          = {https://juser.fz-juelich.de/record/9693},
}