Journal Article

PreJuSER-25523

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Comment on : Influence of crystal polarity on the properties of Pt/GaN Schottky diodes (77 (2000), S. 2012)

Rizzi, A.FZJ* ; Lüth, H.FZJ*

2002
American Institute of Physics Melville, NY

This record in other databases:    

Please use a persistent id in citations: http://hdl.handle.net/2128/1958  doi:10.1063/1.1435067

Keyword(s): J

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Institut für Halbleiterschichten und Bauelemente (ISG-1)

Research Program(s):

1. Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik (I01)

Appears in the scientific report 2002
Notes: This version is available at the following Publisher URL: http://apl.aip.org

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Database coverage:

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