Separation of hot-electron and self-heating effects in two-dimensional AlGaN/GaN-based conductivity channels

Vitusevich, S. A.; Petrychuk, M. V.; Belyaev, A. E.; Eastman, L. F.; Smart, J.; Klein, N.; Vertiatchikh, A.; Sokolov, V. N.; Tilak, V.; Avksentiev, A. Yu.; Kochelap, V. A.; Danylyuk, S. V.

doi:10.1063/1.1542928

Journal Article

Separation of hot-electron and self-heating effects in two-dimensional AlGaN/GaN-based conductivity channels

Vitusevich, S. A.FZJ* ; Danylyuk, S. V.FZJ* ; Klein, N.FZJ* ; Petrychuk, M. V. ; Avksentiev, A. Y. ; Sokolov, V. N. ; Kochelap, V. A. ; Belyaev, A. E. ; Tilak, V. ; Smart, J. ; Vertiatchikh, A. ; Eastman, L. F.

2003
American Institute of Physics Melville, NY

Applied physics letters 82, 748 - 750 (2003) [10.1063/1.1542928]

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Please use a persistent id in citations: http://hdl.handle.net/2128/2074 doi:10.1063/1.1542928

Abstract: We address experimental and theoretical study of a two-dimensional electron gas transport at low and moderate electric fields. The devices under study are group-III nitride-based (AlGaN/GaN) gateless heterostructures grown on sapphire. The transmission line model patterns of different channel lengths, L, and of the same channel width are used. A strong dependence of the device I-V characteristics on the channel length has been found. We have developed a simple theoretical model to adequately describe the observed peculiarities in the I-V characteristics measured in steady-state and pulsed (10(-6) s) regimes. The effect of the Joule heating of a heterostructure is clearly distinguished. The thermal impedance and the channel temperature rise caused by the Joule self-heating have been extracted for the devices of different L at different values of dissipated power. The current reduction due to both self-heating and hot-electron effects is determined quantitatively as a function of the electric field. (C) 2003 American Institute of Physics.

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