Journal Article PreJuSER-33991

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Amorphous silicon - A promising material for diodes with ultra thin absorber

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2003
INOE & INFM Bucharest

Journal of optoelectronics and advanced materials 5, 1305 ()

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Abstract: Novel interferometers for length and displacement measurements based on sampling an optical standing wave will be presented. The interference of two laser beams propagating in opposite direction results in a sinusoidal light intensity profile, which can be detected by thin transparent photodiodes based on amorphous silicon. Two individual detectors positioned on he optical axis of a standing wave allow bi-directional fringe counting. The operation principle of set-ups consisting of two individual nip-photodiodes on one hand and a phase sensitive transparent photodiode based on two integrated nip-diodes on the other hand will be discussed. With both set-ups Lissajous figures are detected demonstrating the feasibility of the new concept for length and displacement measurements.

Keyword(s): J ; amorphous silicon (auto) ; photodiode (auto) ; photodetector (auto) ; interferometer (auto)


Note: Record converted from VDB: 12.11.2012

Contributing Institute(s):
  1. Institut für Photovoltaik (IPV)
Research Program(s):
  1. Photovoltaik (E02)

Appears in the scientific report 2003
Notes: Nachtrag
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 Record created 2012-11-13, last modified 2024-07-12


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