Journal Article

PreJuSER-39919

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Effect of Rashba spin-orbit coupling on magnetotransport in InGaAs/InP quantum wire structures

Schäpers, T.FZJ* ; Knobbe, J.FZJ* ; Guzenko, V. A.FZJ*

2004
APS College Park, Md.

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Please use a persistent id in citations: http://hdl.handle.net/2128/1979  doi:10.1103/PhysRevB.69.235323

Abstract: The Rashba spin-orbit coupling in InGaAs/InP quantum wire structures with a width varying between 1 mum and 400 nm is investigated. For all quantum wire structures a clear beating pattern in the oscillations of the magnetoresistance owing to the presence of Rashba spin-orbit coupling is observed. By applying a bias voltage to a gate electrode covering the wires it was possible to control the magnitude of the spin-orbit coupling. For the narrowest wire the effect of the confining potential on the sublevel spectrum could be resolved in the magnetoresistance oscillations. It is found that the node of the beating pattern shifts towards larger magnetic fields with decreasing wire width. The corresponding increase of the Rashba spin-orbit coupling parameter is explained by the effect of the confining potential of the wire.

Keyword(s): J

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Institut für Halbleiterschichten und Bauelemente (ISG-1)

Research Program(s):

1. Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik (I01)

Appears in the scientific report 2004
Notes: This version is available at the following Publisher URL: http://prb.aps.org

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