Journal Article

PreJuSER-42141

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Magnetic and structural properties of GaN thin layers implanted with Mn, Cr, or V ions

Guzenko, V. A.FZJ* ; Thillosen, N.FZJ* ; Dahmen, A.FZJ* ; Calarco, R.FZJ* ; Schäpers, T.FZJ* ; Houben, L. ; Luysberg, M. ; Schineller, B.FZJ* ; Heuken, M. ; Kaluza, A.

2004
American Institute of Physics Melville, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/1084  doi:10.1063/1.1805718

Abstract: We report on magnetic and structural properties of n- and p-type GaN layers implanted with Mn, Cr, and V. The samples were subsequently annealed in a N-2 atmosphere at a constant temperature in the range between 700 and 1050degreesC. Measurements of the magnetization as a function of magnetic field as well as of the temperature show typical paramagnetic behavior. In addition, a weak antiferromagnetic coupling between the implanted ions was observed. 3d-metal rich precipitates of crystalline nature are revealed by high resolution transmission electron microscopy. (C) 2004 American Institute of Physics.

Keyword(s): J

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Institut für Halbleiterschichten und Bauelemente (ISG-1)
2. Mikrostrukturforschung (IFF-IMF)

Research Program(s):

1. Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik (I01)
2. Kondensierte Materie (M02)

Appears in the scientific report 2004
Notes: This version is available at the following Publisher URL: http://jap.aip.org

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