Investigation of plasma hydrogenation and trapping mechanism for layer transfer

Chen, P.; Buca, D.; Schmidt, B.; Loo, R.; Cai, M.; Lau, S. S.; Chu, P. K.; Höchbauer, T.; Alford, T.; Caymax, M.; Mantl, S.; Lee, J.-K.; Nastasi, M.; Theodore, N. D.; Mayer, J. W.

doi:10.1063/1.1852087

Journal Article

Investigation of plasma hydrogenation and trapping mechanism for layer transfer

Chen, P. ; Chu, P. K. ; Höchbauer, T. ; Lee, J.-K. ; Nastasi, M. ; Buca, D.FZJ* ; Mantl, S.FZJ* ; Loo, R. ; Caymax, M. ; Alford, T. ; Mayer, J. W. ; Theodore, N. D. ; Cai, M. ; Schmidt, B. ; Lau, S. S.

2005
American Institute of Physics Melville, NY

Applied physics letters 86, 031904-1 - 031904-3 (2005) [10.1063/1.1852087]

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Please use a persistent id in citations: http://hdl.handle.net/2128/2002 doi:10.1063/1.1852087

Abstract: Hydrogen ion implantation is conventionally used to initiate the transfer of Si thin layers onto Si wafers coated with thermal oxide. In this work, we studied the feasibility of using plasma hydrogenation to replace high dose H implantation for layer transfer. Boron ion implantation was used to introduce H-trapping centers into Si wafers to illustrate the idea. Instead of the widely recognized interactions between boron and hydrogen atoms, this study showed that lattice damage, i.e., dangling bonds, traps H atoms and can lead to surface blistering during hydrogenation or upon postannealing at higher temperature. The B implantation and subsequent processes control the uniformity of H trapping and the trap depths. While the trap centers were introduced by B implantation in this study, there are many other means to do the same without implantation. Our results suggest an innovative way to achieve high quality transfer of Si layers without H implantation at high energies and high doses. (C) 2005 American Institute of Physics.

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