Journal Article

PreJuSER-44924

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Direct Evidence for Shallow Acceptor States with Nonspherical Symmetry in GaAs

Mahieu, G. ; Grandidier, B. ; Deresmes, D. ; Nys, J. P. ; Stiévenard, D. ; Ebert, P.FZJ*

2005
APS College Park, Md.

This record in other databases:    

Please use a persistent id in citations: http://hdl.handle.net/2128/1090  doi:10.1103/PhysRevLett.94.026407

Abstract: We investigate the energy and symmetry of Zn and Be dopant-induced acceptor states in GaAs using cross-sectional scanning tunnelling microscopy (STM) and spectroscopy at low temperatures. The ground and first excited states are found to have a nonspherical symmetry. In particular, the first excited acceptor state has a T-d symmetry. Its major contribution to the STM empty-state images allows us to explain the puzzling triangular shaped contrast observed in the empty-state STM images of acceptor impurities in III-V semiconductors.

Keyword(s): J

Note: Record converted from VDB: 12.11.2012

---

Contributing Institute(s):

1. Mikrostrukturforschung (IFF-IMF)

Research Program(s):

1. Kondensierte Materie (M02)

Appears in the scientific report 2005
Notes: Nachtrag
Notes: This version is available at the following Publisher URL: http://prl.aps.org

---

Database coverage:

---