Journal Article PreJuSER-4557

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Growth of homoepitaxial strontium titanate thin films by molecular-beam epitaxy

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2009
American Institute of Physics Melville, NY

Applied physics letters 94, 162905 () [10.1063/1.3117365]

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Abstract: We report the structural properties of homoepitaxial (100) SrTiO3 films grown by reactive molecular-beam epitaxy (MBE). The lattice spacing and x-ray diffraction (XRD) rocking curves of stoichiometric MBE-grown SrTiO3 films are indistinguishable from the underlying SrTiO3 substrates. Off-stoichiometry for both strontium-rich and strontium-poor compositions (i.e., Sr1+xTiO3+delta films with -0.2 < x < 0.2) results in lattice expansion with significant changes to the shuttered reflection high-energy electron diffraction oscillations, XRD, and film microstructure. The dependence of lattice spacing on nonstoichiometry is smaller for MBE-grown films than for homoepitaxial (100) Sr1+xTiO3+delta films prepared by pulsed-laser deposition or sputtering.

Keyword(s): J ; epitaxial layers (auto) ; molecular beam epitaxial growth (auto) ; reflection high energy electron diffraction (auto) ; stoichiometry (auto) ; strontium compounds (auto) ; X-ray diffraction (auto)

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Note: This work was supported by the Office of Naval Research through Grant Nos. N00014-03-1-0721 and N00014-04-1-0426 monitored by Colin Wood, and by the NSF through the MRSEC Program (DMR-0520404 and DMR-0820404) and by Grant No. DMR-0507146. L. F. K. acknowledges financial support from Applied Materials.

Contributing Institute(s):
  1. Halbleiter-Nanoelektronik (IBN-1)
  2. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)
Research Program(s):
  1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2009
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 Record created 2012-11-13, last modified 2020-04-23