Journal Article

PreJuSER-50463

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Traveling-wave photomixer with recessed interdigitated contacts on low-temperature-grown GaAs

Mikulics, M.FZJ* ; Michael, E. A. ; Schieder, R. ; Stutzki, J. ; Marso, M.FZJ* ; von der Hart, A.FZJ* ; Bochem, H. P.FZJ* ; Lüth, H.FZJ* ; Kordos, P.

2006
American Institute of Physics Melville, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/2026  doi:10.1063/1.2168250

Abstract: We have fabricated and characterized novel traveling-wave photomixers with recessed interdigitated metal-semiconductor-metal (MSM) contacts based on low-temperature-grown GaAs. The new recessed MSM geometry led to an improved electric-field distribution inside the photomixer structure and resulted in an up-to-100% increase in the output power of continuously operated devices, compared to conventional MSM devices with standard surface electrodes fabricated on an identical material. The recessed electrode structure also resulted in lower saturation of output power at higher input powers, enabling it to take advantage of higher input powers. (c) 2006 American Institute of Physics.

Keyword(s): J

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Institut für Halbleiterschichten und Bauelemente (ISG-1)
2. Center of Nanoelectronic Systems for Information Technology (CNI)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2006
Notes: This version is available at the following Publisher URL: http://apl.aip.org

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