Band alignment between (100) Si and amorphous LaAlO3,LaScO3, and Sc2O3: Atomically abrupt versus interlayer-containing interfaces

Afanas'ev, V. V.; Edge, L. F.; Schlom, D. G.; Stesmans, A.; Schubert, J.; Heeg, T.

doi:10.1063/1.2164432

Journal Article

Band alignment between (100) Si and amorphous LaAlO3,LaScO3, and Sc2O3: Atomically abrupt versus interlayer-containing interfaces

Afanas'ev, V. V. ; Stesmans, A. ; Edge, L. F. ; Schlom, D. G. ; Heeg, T.FZJ* ; Schubert, J.FZJ*

2006
American Institute of Physics Melville, NY

Applied physics letters 88, 032104 (2006) [10.1063/1.2164432]

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Please use a persistent id in citations: http://hdl.handle.net/2128/2027 doi:10.1063/1.2164432

Abstract: Incorporation of a similar to 1-nm-thick SiOx interlayer is found to have little effect on the band alignment between a (100) Si substrate and amorphous LaAlO3, LaScO2, and Sc2O3 insulators. All of these materials are found to give the same band offsets irrespective of differences in their composition, even when contacting Si directly. This suggests that the bulk electron states and properties of the semiconductor and insulator layer play a much more important role in determining the band lineup at the interface than any dipoles related to particular bonding configurations encountered in the transition region between Si and these oxides. (c) 2006 American Institute of Physics.

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