Journal Article

PreJuSER-57472

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Formation of Vp-Zn complexes in bulk InP(Zn) by migration of P vacancies from the (110) surface

Slotte, J. ; Saarinen, K. ; Ebert, P.FZJ*

2006
APS College Park, Md.

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Please use a persistent id in citations: http://hdl.handle.net/2128/7702  doi:10.1103/PhysRevB.73.193313

Abstract: We apply a combination of positron annihilation spectroscopy and scanning tunneling microscopy to show that thermally generated P vacancies diffuse from the InP surface toward the bulk. The defect observed in the bulk can be identified as a complex consisting of a P vacancy and a Zn impurity. We infer that this pair is formed when the diffusing positive P vacancy is trapped at the Zn dopant. A rough estimate for the migration energy of the P vacancy results in a value of 1.3 eV.

Keyword(s): J

Note: Record converted from VDB: 12.11.2012

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Research Program(s):

1. Kondensierte Materie (P54)

Appears in the scientific report 2006
Notes: Nachtrag

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Database coverage:
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