Doping modulation in GaN imaged by croaa-sectional scanning tunneling microscopy

Eisele, H.; Borisova, S.; Ivanova, L.; Ebert, Ph.; Winkelnkemper, M.; Dähne, M.

doi:10.1063/1.3123258

Journal Article

Doping modulation in GaN imaged by croaa-sectional scanning tunneling microscopy

Eisele, H. ; Ivanova, L. ; Borisova, S.FZJ* ; Dähne, M. ; Winkelnkemper, M. ; Ebert, P.FZJ*

2009
American Institute of Physics Melville, NY

Applied physics letters 94, 162110 (2009) [10.1063/1.3123258]

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Please use a persistent id in citations: http://hdl.handle.net/2128/17278 doi:10.1063/1.3123258

Abstract: We investigated the imaging mechanisms of a Si doping modulation in GaN by cross-sectional scanning tunneling microscopy (STM). The Si doping modulation gives rise to a voltage and tip dependent height modulation of at least 0.4 A. The origin of the height modulation in constant-current STM images is traced to two mechanisms. A doping-induced modu-lation of the band edge energies yields a voltage dependent electronic contrast and an additional mechanical relaxation of the doping-induced strain at the cleavage surface is respon-sible for a voltage independent modulation of 0.35 A.

Keyword(s): J ; anelastic relaxation (auto) ; doping profiles (auto) ; gallium compounds (auto) ; III-V semiconductors (auto) ; scanning tunnelling microscopy (auto) ; semiconductor doping (auto) ; silicon (auto) ; wide band gap semiconductors (auto)