Journal Article

PreJuSER-6169

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Effects of resonant interface states on tunneling magnetoresistance

Wunnicke, O.FZJ* ; Papanikolaou, N.FZJ* ; Zeller, R.FZJ* ; Dederichs, P. H.FZJ* ; Drchal, V. ; Kudrnovsky, J.

2002
APS College Park, Md.

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Please use a persistent id in citations: http://hdl.handle.net/2128/1548  doi:10.1103/PhysRevB.65.064425

Abstract: Based on model and ab initio calculations we discuss the effect of resonant interface states on the conductance of epitaxial tunnel junctions. In particular we show that the "hot spots" found by several groups in ab initio calculations of symmetrical barriers of the k -resolved conductance can be explained by the formation of bonding and antibonding hybrids between the interface states on both sides of the barrier. If the resonance condition for these hybrid states is met, the electron tunnels through the barrier without attenuation. Even when both hybrid states move together and form a single resonance, strongly enhanced transmission is still observed. The effect explains why, for intermediate barrier thicknesses, the tunneling conductance can be dominated by interface states, although hot spots only occur in a tiny fraction of the surface Brillouin zone.

Keyword(s): J

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Theorie III (IFF-TH-III)

Research Program(s):

1. Kondensierte Materie (M02)

Appears in the scientific report 2002
Notes: This version is available at the following Publisher URL: http://prb.aps.org

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