Book/Report

FZJ-2018-02837

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Amorphisierung reinen Galliums : Laserabschrecken und Tieftemperatur-Ionenbestrahlung im Vergleich mit anderen Methoden

Fröhlingsdorf, J. (Corresponding author)FZJ*

1988
Kernforschungsanlage Jülich, Verlag Jülich

Please use a persistent id in citations: http://hdl.handle.net/2128/18451

Report No.: Juel-2176

Abstract: Gallium is the only pure metal that can be amorphized in the absence of any second stabilizing element. Laser quenching of Ga-films at temperatures below 16 K, the crystallization temperature of amorphous Gallium (a-Ga), provides a-Ga out of both $\alpha$- and $\beta$-crystalline Ga. Low temperatures not only are necessary to abtain high quenching rates but also stabilize the amorphous phase. a-GA prepared by laser irradiation at temperatures higher than 16 K is unstable and has a certain "lifetime" that decreases with increasing temperature. Transient conductance measurements of laser melting and quenching of Gallium highlight some of the important features of rapid solidification. For the first time the lower part of the C-shaped transition curve in a TTT-diagram can be measured for a pure metal. Experimental results can be explained in terms of a nucleation model showing good agreement with results of more conventional quenching processes.

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Contributing Institute(s):

1. Publikationen vor 2000 (PRE-2000)

Research Program(s):

1. 899 - ohne Topic (POF3-899) (POF3-899)

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Database coverage:

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