| Home > Publications database > Fügen von SiC-Keramiken mittels Borcarbid, Silicium und Kohlenstoff für Hochtemperaturanwendungen |
| Book/Report | FZJ-2019-00619 |
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1995
Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag
Jülich
Please use a persistent id in citations: http://hdl.handle.net/2128/21353
Report No.: Juel-3079
Abstract: The present work is a contribution to joining of SiC-Ceramics for high temperature applications. The aim was to develop a joining technique for Silicon Carbide ceramics by means of boron, carbon and silicon. The joint is created by the formation of a welding zone, which consists of SiC as it is the material to be joined. For this purpose are used the follow means: a) sputtering layers of B$_{4}$C, Si and C, b) vacuum coatings of Si or Si foils and C, c) powder mixtures of B$_{4}$C, Si and C. The joints were examined at ceramographic cross sections of the bonding zone, by means of XRD, REM/EDAX, TEM and EPMA. The bond strength was determined in the 4-point bend test at room temperature and at 1370° C. It was found that a useable result can be obtained, if the temperature of the joining process exceeds the melting point of Si (1410° C). A high bending strength with a high Weibull modulus was achieved by using sputter layers. The powder mixtures provided a satisfactory bending strength with a low Weibull modulus.
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