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| Hauptseite > Publikationsdatenbank > Impact of the contacting scheme on I-V measurements of metallization-free silicon heterojunction solar cells |
| Hauptseite > Publikationsdatenbank > Impact of the contacting scheme on I-V measurements of metallization-free silicon heterojunction solar cells |
| Journal Article | FZJ-2023-02283 |
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2023
EDP Sciences
Les Ulis
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Please use a persistent id in citations: doi:10.1051/epjpv/2023009 doi:10.34734/FZJ-2023-02283
Abstract: I-V measurements are sensitive to the number and positioning of current and voltage sensingcontacts. For busbarless solar cells, measurement setups have been developed using current collection wires andseparate voltage sense contacts. Placing the latter at a defined position enables a grid resistance neglectingmeasurement and thus I-V characteristics independent from the contacting system. This technique has beendeveloped for solar cells having a finger grid and good conductivity in the direction of the fingers. The optimalposition of the sense contact in case offinger-free silicon heterojunction solar cells has not yet been studied. Here, thelateral charge carrier transport occurs ina transparentconductiveoxide layer resulting ina higher lateral resistance.We perform finite difference method simulations of HJT solar cells without front metallization to investigate theimpact of high lateral resistances on the I-Vmeasurement of solar cells.We showthe high sensitivity on thenumberof used wires for contacting as well as the position of the sense contact for the voltage measurement. Using thesimulations,we are able toexplainthe highdifferenceofupto 7.5%infill factormeasurements ofmetal free solar cellswith varying TCO sheet resistances between two measurement systems using different contacting setups. Wepropose a method to compensate for the contacting system to achieve a grid-resistance neglecting measurementwith both systems allowing a reduction of the FF difference to below 1.5%.
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