Contribution to a conference proceedings

FZJ-2024-00364

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png On the Plausibility of Thermodiffusion as the Primary Mechanism for Unipolar Resistive Switching in Metal-Oxide-Metal Memristive Devices

Lange, K. ; Waser, R. ; Menzel, S.FZJ*

2023
IEEE

This record in other databases:    

Please use a persistent id in citations: doi:10.23919/SISPAD57422.2023.10319615

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Contributing Institute(s):

1. Elektronische Materialien (PGI-7)
2. JARA-FIT (JARA-FIT)

Research Program(s):

1. 5233 - Memristive Materials and Devices (POF4-523) (POF4-523)
2. BMBF 16ME0399 - Verbundprojekt: Neuro-inspirierte Technologien der künstlichen Intelligenz für die Elektronik der Zukunft - NEUROTEC II - (BMBF-16ME0399) (BMBF-16ME0399)
3. BMBF 16ME0398K - Verbundprojekt: Neuro-inspirierte Technologien der künstlichen Intelligenz für die Elektronik der Zukunft - NEUROTEC II - (BMBF-16ME0398K) (BMBF-16ME0398K)

Appears in the scientific report 2023

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