Dual‐Site Doping and Low‐Angle Grain Boundaries Lead to High Thermoelectric Performance in N‐Type Bi 2 S 3

Dual‐Site Doping and Low‐Angle Grain Boundaries Lead to High Thermoelectric Performance in N‐Type Bi 2 S 3 - FZJ-2024-00634

Main document file(s):

Adv Funct Materials - 2023 - Yang - Dual‐Site Doping and Low‐Angle Grain Boundaries Lead to High Thermoelectric Performance

version 1

Adv Funct Materials - 2023 - Yang - Dual‐Site Doping and Low‐Angle Grain Boundaries Lead to High Thermoelectric Performance.gif (icon)	[4.24 KB] 04 Apr 2024, 11:03	OpenAccess
Adv Funct Materials - 2023 - Yang - Dual‐Site Doping and Low‐Angle Grain Boundaries Lead to High Thermoelectric Performance.jpg (icon-1440)	[140.96 KB] 04 Apr 2024, 11:03	OpenAccess
Adv Funct Materials - 2023 - Yang - Dual‐Site Doping and Low‐Angle Grain Boundaries Lead to High Thermoelectric Performance.jpg (icon-180)	[70.6 KB] 04 Apr 2024, 11:03	OpenAccess
Adv Funct Materials - 2023 - Yang - Dual‐Site Doping and Low‐Angle Grain Boundaries Lead to High Thermoelectric Performance.jpg (icon-640)	[140.96 KB] 04 Apr 2024, 11:03	OpenAccess
Adv Funct Materials - 2023 - Yang - Dual‐Site Doping and Low‐Angle Grain Boundaries Lead to High Thermoelectric Performance.pdf	[3.95 MB] 04 Apr 2024, 11:03	OpenAccess

Similar records

JuSER :: :: :: ::
Powered by v1.1.7 |
Maintained by

Impressum | Data Privacy Policy

This site is also available in the following languages:
Deutsch English

guest :: login JuSER
		Search		Submit		Personalize Your alerts Your baskets Your searches		Help