Journal Article

FZJ-2024-00634

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Dual‐Site Doping and Low‐Angle Grain Boundaries Lead to High Thermoelectric Performance in N‐Type Bi 2 S 3

Yang, J. ; Ye, H. ; Zhang, X. ; Miao, X. ; Yang, X. ; Xie, L. ; Shi, Z. ; Chen, S. ; Zhou, C. ; Qiao, G. ; Wuttig, M. (Corresponding author)FZJ* ; Wang, L. ; Liu, G. ; Yu, Y. (Corresponding author)

2024
Wiley-VCH Weinheim

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Please use a persistent id in citations: doi:10.1002/adfm.202306961  doi:10.34734/FZJ-2024-00634

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Contributing Institute(s):

1. JARA Institut Green IT (PGI-10)

Research Program(s):

1. 5233 - Memristive Materials and Devices (POF4-523) (POF4-523)

Appears in the scientific report 2024

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Database coverage:
; ; ; Clarivate Analytics Master Journal List ; Current Contents - Electronics and Telecommunications Collection ; Current Contents - Engineering, Computing and Technology ; Current Contents - Physical, Chemical and Earth Sciences ; DEAL Wiley ; Ebsco Academic Search ; Essential Science Indicators ; IF >= 15 ; JCR ; SCOPUS ; Science Citation Index Expanded ; Web of Science Core Collection

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