Journal Article

FZJ-2024-01268

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Impact of Non‐Stoichiometric Phases and Grain Boundaries on the Nanoscale Forming and Switching of HfO x Thin Films

Schmidt, N.FZJ* ; Kaiser, N.FZJ* ; Vogel, T. ; Piros, E. ; Karthäuser, S. ; Waser, R.FZJ* ; Alff, L. ; Dittmann, R. (Corresponding author)FZJ*

2024
Wiley-VCH Verlag GmbH & Co. KG Weinheim

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Please use a persistent id in citations: doi:10.1002/aelm.202300693  doi:10.34734/FZJ-2024-01268

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Contributing Institute(s):

1. Elektronische Materialien (PGI-7)
2. JARA-FIT (JARA-FIT)

Research Program(s):

1. 5233 - Memristive Materials and Devices (POF4-523) (POF4-523)
2. DFG project 167917811 - SFB 917: Resistiv schaltende Chalkogenide für zukünftige Elektronikanwendungen: Struktur, Kinetik und Bauelementskalierung "Nanoswitches" (167917811) (167917811)

Appears in the scientific report 2024

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Database coverage:
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