Journal Article

FZJ-2024-01443

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Resistive switching and role of interfaces in memristive devices based on amorphous NbO x grown by anodic oxidation

Leonetti, G. ; Fretto, M. ; Bejtka, K. ; Olivetti, E. S. ; Pirri, F. C. ; De Leo, N. ; Valov, I.FZJ* ; Milano, G. (Corresponding author)

2023
RSC Publ. Cambridge

This record in other databases:      

Please use a persistent id in citations: doi:10.1039/D3CP01160G  doi:10.34734/FZJ-2024-01443

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Contributing Institute(s):

1. Elektronische Materialien (PGI-7)
2. JARA-FIT (JARA-FIT)

Research Program(s):

1. 5233 - Memristive Materials and Devices (POF4-523) (POF4-523)

Appears in the scientific report 2023

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Database coverage:
; ; ; Clarivate Analytics Master Journal List ; Current Contents - Physical, Chemical and Earth Sciences ; Essential Science Indicators ; IF < 5 ; JCR ; National-Konsortium ; SCOPUS ; Science Citation Index Expanded ; Web of Science Core Collection

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