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| Home > Publications database > Local Alloy Order in a Ge 1 − x Sn x / Ge Epitaxial Layer |
| Home > Publications database > Local Alloy Order in a Ge 1 − x Sn x / Ge Epitaxial Layer |
| Journal Article | FZJ-2024-01643 |
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2023
American Physical Society
College Park, Md. [u.a.]
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Please use a persistent id in citations: doi:10.1103/PhysRevApplied.20.024021 doi:10.34734/FZJ-2024-01643
Abstract: The local ordering of atoms in alloys directly has a strong impact on their electronic and opticalproperties. This is particularly relevant in nonrandom alloys, especially if they are deposited far fromthe equilibrium processes, as is the case for epitaxial Ge1−xSnx layers. In this work, we investigate thearrangement of Ge and Sn atoms in optoelectronic grade Ge1−xSnx epitaxial layers featuring a Sn contentin the 5–14% range by using polarization-dependent Raman spectroscopy and density-functional-theorycalculations. The thorough analysis of the polarization-dependent spectra in parallel and perpendicularconfiguration allowed us to properly tag all the observed vibrational modes, and to shed light on that associatedto disorder-assisted Raman transitions. Indeed, with the help of large-scale atomistic simulations,we were able to highlight how the presence of Sn atoms, that modify the local environments of Ge atoms,gives rise to two spectral features at different Raman shifts, corresponding to distortions of the atomicbonds. This analysis provides a valuable framework for advancing the understanding of the vibrationalproperties in Ge1−xSnx alloys, particularly with regard to the impact of local ordering of the differentatomic species.
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