| Home > Publications database > Current-induced magnetization switching in a magnetic topological insulator heterostructure |
| Journal Article | FZJ-2024-02101 |
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2024
APS
College Park, MD
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Please use a persistent id in citations: doi:10.1103/PhysRevMaterials.8.026201 doi:10.34734/FZJ-2024-02101
Abstract: We present the current-induced switching of the internal magnetization direction in a magnetic topologicalinsulator/topological insulator heterostructure in the quantum anomalous Hall regime. The switching process isbased on the bias current dependence of the coercive field, which is attributed to either Joule heating or the effectof the spin transfer provided by the unpolarized bias current. Increasing the bias current leads to a decrease in themagnetic order in the sample. When the applied current is subsequently reduced, the magnetic moments alignwith an externally applied magnetic field, resulting in repolarization in the opposite direction. This includes areversal of the spin polarization and hence a reversal of the chiral edge mode. Possible applications in spintronicdevices are discussed.
Keyword(s): Information and Communication (1st) ; Condensed Matter Physics (2nd)
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