Contribution to a conference proceedings/Contribution to a book

FZJ-2024-03293

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png A Cryogenic Voltage Regulator with Integrated Voltage Reference in 22 nm FDSOI Technology

Cabrera Galicia, A. R. (Corresponding author)FZJ* ; Ashok, A.FZJ* ; Vliex, P.FZJ* ; Kruth, A.FZJ* ; Zambanini, A.FZJ* ; van Waasen, S.FZJ*

2023
IEEE
ISBN: 979-8-3503-8119-1

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Please use a persistent id in citations: doi:10.1109/APCCAS60141.2023.00075  doi:10.1109/APCCAS60141.2023  doi:10.34734/FZJ-2024-03293

Abstract: High performance ICs (Integrated Circuits) operating at cryogenic temperatures will be a fundamental part of future quantum computers, providing precise manipulation of a large number of qubits [1], [2]. However, these ICs will need regulated and stable supply voltages in situ for optimum operation due to their mixed signal nature [3], [4]. Accordingly, this paper presents the design and cryogenic electrical characterization of a voltage regulator with an integrated voltage reference. Together, the circuits can generate a regulated voltage of 1.15 V with up to 10 mA of output current capability at 6 K. The investigated circuits exploit two cryogenic MOS transistor phenomena, the threshold voltage (Vth) saturation and the transconductance (gm) increase. The circuits were developed in 22 nm FDSOI technology.

Keyword(s): Engineering, Industrial Materials and Processing (1st) ; Instrument and Method Development (2nd)

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Contributing Institute(s):

1. Zentralinstitut für Elektronik (ZEA-2)

Research Program(s):

1. 5223 - Quantum-Computer Control Systems and Cryoelectronics (POF4-522) (POF4-522)

Appears in the scientific report 2024

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Database coverage:

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