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Home > Publications database > Modeling and design of GeSn avalanche photodiodes with high tin content for applications at 3.3 μm > Access to Fulltext
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Modeling and design of GeSn avalanche photodiodes with high tin content for applications at 3.3 μm - FZJ-2024-05185
 
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      Modeling_and_Design_of_GeSn_Avalanche_Photodiodes_With_High_Tin_Content_for_Applications_at_3.3_m
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    Modeling_and_Design_of_GeSn_Avalanche_Photodiodes_With_High_Tin_Content_for_Applications_at_3.3_m.jpg (icon-180) [57.95 KB] 06 Sep 2024, 13:20 OpenAccess
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    Modeling_and_Design_of_GeSn_Avalanche_Photodiodes_With_High_Tin_Content_for_Applications_at_3.3_m.pdf [2.54 MB] 06 Sep 2024, 13:20 OpenAccess
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