Journal Article

FZJ-2024-05185

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Modeling and design of GeSn avalanche photodiodes with high tin content for applications at 3.3 μm

Finazzi, L. (Corresponding author) ; Giani, R. ; Concepción, O.FZJ* ; Buca, D.FZJ* ; Reboud, V. ; Isella, G. ; Tosi, A.

2024
IEEE New York, NY

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Please use a persistent id in citations: doi:10.1109/JSTQE.2024.3439495  doi:10.34734/FZJ-2024-05185

Abstract: We propose and compare two back-side illuminated GeSn avalanche photodiode (APD) mesa structures with 15% tin content operating at photon wavelengths up to 3.3 μm, suitable for applications like methane gas sensing and analysis of tampered olive oil. The two structures have different multiplication materials: a) silicon, which requires an additional Ge Strain-Relaxed Buffer (SRB) layer for high-quality GeSn growth; b) germanium, which is acting also as SRB layer. The latter design is innovative compared to the state-of-the-art and it proposed to: i) reduce the space charge region (SCR) width by avoiding a too thick Ge SRB, which is required for growing high-tin-content GeSn; ii) avoid one supplementary non-lattice matched heterojunction in the SCR.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)

Research Program(s):

1. 5234 - Emerging NC Architectures (POF4-523) (POF4-523)

Appears in the scientific report 2024

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Database coverage:
; ; ; Clarivate Analytics Master Journal List ; Current Contents - Electronics and Telecommunications Collection ; Current Contents - Engineering, Computing and Technology ; Current Contents - Physical, Chemical and Earth Sciences ; Essential Science Indicators ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index Expanded ; Web of Science Core Collection

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