Journal Article

FZJ-2024-05579

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Enhancing Device Performance with High Electron Mobility GeSn Materials

Junk, Y.FZJ* ; Concepción Díaz, O.FZJ* ; Frauenrath, M. ; Sun, J.FZJ* ; Bae, J. H.FZJ* ; Bärwolf, F. ; Mai, A. ; Hartmann, J.-M. ; Grützmacher, D.FZJ* ; Buca, D.FZJ* ; Zhao, Q.-T. (Corresponding author)FZJ*

2024
Wiley-VCH Verlag GmbH & Co. KG Weinheim

This record in other databases:    

Please use a persistent id in citations: doi:10.1002/aelm.202400561  doi:10.34734/FZJ-2024-05579

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)

Research Program(s):

1. 5234 - Emerging NC Architectures (POF4-523) (POF4-523)

Appears in the scientific report 2024

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Database coverage:
; ; ; ; Article Processing Charges ; Clarivate Analytics Master Journal List ; Current Contents - Physical, Chemical and Earth Sciences ; DEAL Wiley ; DOAJ Seal ; Essential Science Indicators ; Fees ; IF >= 5 ; JCR ; SCOPUS ; Science Citation Index Expanded ; Web of Science Core Collection

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