Hauptseite > Publikationsdatenbank > High-throughput magnetic co-doping and design of exchange interactions in topological insulators |
Journal Article | FZJ-2024-05637 |
; ; ; ;
2024
APS
College Park, MD
This record in other databases:
Please use a persistent id in citations: doi:10.1103/PhysRevMaterials.8.104201 doi:10.34734/FZJ-2024-05637
Abstract: Using high-throughput automation of ab initio impurity embedding simulations, we create a database of 3d and 4d transition metal defects embedded into the prototypical topological insulators (TIs) Bi 2 Te 3 andBi 2 Se 3 . We simulate both single impurities as well as impurity dimers at different impurity-impurity distances inside the topological insulator matrix. We extract changes to magnetic moments, analyze the polarizability ofnonmagnetic impurity atoms via nearby magnetic impurity atoms and calculate the exchange coupling constants for a Heisenberg Hamiltonian. We uncover chemical trends in the exchange coupling constants and discussthe impurities’ abilities with respect to magnetic order in the fields of quantum anomalous Hall insulators and topological quantum computing. In particular, we confirm that co-doping of different magnetic dopants is aviable strategy to engineer the magnetic ground state in magnetic TIs.
![]() |
The record appears in these collections: |