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@ARTICLE{Liu:1033644,
author = {Liu, Teren and Seidel, Lukas and Concepción, Omar and
Reboud, Vincent and Chelnokov, Alexei and Capellini,
Giovanni and Oehme, Michael and Grützmacher, Detlev and
Buca, Dan},
title = {{E}lectrically {P}umped {G}e{S}n {M}icro-{R}ing {L}asers},
journal = {IEEE journal of selected topics in quantum electronics},
volume = {31},
number = {1: SiGeSn Infrared Photon.},
issn = {1077-260X},
address = {New York, NY},
publisher = {IEEE},
reportid = {FZJ-2024-06516},
pages = {1 - 7},
year = {2025},
abstract = {Recent progress in the quest for CMOS-integrable GeSn light
sources comprises the optically-pumped laser operating at
room temperature and the first demonstrations of
electrically pumped lasers. In this work, the performance of
electrically-pumped double heterostructure GeSn ring laser
diodes are evaluated as a function of their geometry and
pumping pulse time. In particular, the trade-off between the
band structure, i.e., the directness of the GeSn band gap,
and the device heat dissipation is discussed in terms of
their impact on the emission intensity and threshold current
density.},
cin = {PGI-9},
ddc = {620},
cid = {I:(DE-Juel1)PGI-9-20110106},
pnm = {5234 - Emerging NC Architectures (POF4-523)},
pid = {G:(DE-HGF)POF4-5234},
typ = {PUB:(DE-HGF)16},
UT = {WOS:001361398200001},
doi = {10.1109/JSTQE.2024.3489712},
url = {https://juser.fz-juelich.de/record/1033644},
}