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@ARTICLE{Liu:1033644,
      author       = {Liu, Teren and Seidel, Lukas and Concepción, Omar and
                      Reboud, Vincent and Chelnokov, Alexei and Capellini,
                      Giovanni and Oehme, Michael and Grützmacher, Detlev and
                      Buca, Dan},
      title        = {{E}lectrically {P}umped {G}e{S}n {M}icro-{R}ing {L}asers},
      journal      = {IEEE journal of selected topics in quantum electronics},
      volume       = {31},
      number       = {1: SiGeSn Infrared Photon.},
      issn         = {1077-260X},
      address      = {New York, NY},
      publisher    = {IEEE},
      reportid     = {FZJ-2024-06516},
      pages        = {1 - 7},
      year         = {2025},
      abstract     = {Recent progress in the quest for CMOS-integrable GeSn light
                      sources comprises the optically-pumped laser operating at
                      room temperature and the first demonstrations of
                      electrically pumped lasers. In this work, the performance of
                      electrically-pumped double heterostructure GeSn ring laser
                      diodes are evaluated as a function of their geometry and
                      pumping pulse time. In particular, the trade-off between the
                      band structure, i.e., the directness of the GeSn band gap,
                      and the device heat dissipation is discussed in terms of
                      their impact on the emission intensity and threshold current
                      density.},
      cin          = {PGI-9},
      ddc          = {620},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {5234 - Emerging NC Architectures (POF4-523)},
      pid          = {G:(DE-HGF)POF4-5234},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:001361398200001},
      doi          = {10.1109/JSTQE.2024.3489712},
      url          = {https://juser.fz-juelich.de/record/1033644},
}