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| Poster (Other) | FZJ-2024-06600 |
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2024
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Please use a persistent id in citations: doi:10.34734/FZJ-2024-06600
Abstract: Germanium quantum wells emerged in recent years as a promising platform for gate-defined spin qubits. The unique properties of a two-dimensional hole gas in strained Ge, with exceptional carrier mobility, compatibility with silicon-based technologies, intrinsic spin-orbit-coupling, and anisotropic g-tensor are key to this promise. Particularly, the last two properties allow fast all-electrical qubit driving and enable novel approaches for spin qubit control. Additionally, the low effective mass and Fermi level pinning to the valence band simplifies the fabrication requirements of these devices. These considerations make Germanium quantum wells an excellent material choice for spin qubits. However, many of the platform's physical properties are yet to be understood in depth. Our measurements aim to uncover the microscopic behavior of the quantum well stack. The initial focus is on one and two qubit devices, to explore and understand the anisotropy of spin-orbit interaction and g-factor tensor. We report the current progress of our studies regarding these devices.
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