Internal Report FZJ-2025-00460

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Focused Ion Beam/Electrochemistry Day 2024

 ;

2024

23 pp. ()

Report No.: 1

Abstract: Focused Ion BeamFocused Ion Beam (FIB) technology has become a crucial tool in microfabrication, microelectronics, and materials science due to its ability to precisely modify materials at the micro and nanoscale. FIB systems may produce sub-micron sized ion beams, such as gallium, using liquid metal ion sources. These beams can be used for sputtering, deposition, implantation, and etching.FIB technology operates by focusing a beam of ions onto a target surface and produces a variety of interactions such as sputtering of surface atoms and implantation of ions. This capability enables highly localized material modifications, which are essential for advanced fabrication processes. The development of high-brightness ion sources and sophisticated ion optics has greatly improved the precision and functionality of FIB systems, making them essential in modern technological applications [1]. FIB is widely employed in semiconductor device manufacturing for various applications, including mask repair, circuit modification, and failure analysis. This technology enables direct, maskless lithography by selectively sputtering material to form patterns with sub-micron precision [2]. The maskless method streamlines the fabrication process and improves the accuracy of doping and implantation in semiconductor devices [3]. FIB's capability to repair photomasks and integrated circuits through precise material addition or removal has been essential in preserving functionality and prolonging the lifespan of semiconductor devices [4].In material science, FIB is used for the nanoscale characterization and modification of materials. It enables the creation of cross-sections, providing detailed analysis of microstructures and interfaces [5]. Furthermore, FIB-induced deposition and etching processes enable to fabricate complex nanostructures and devices without relying on traditional lithographic techniques [6].Figure 1. a) schematic of ion-solid interactions; b) dual-beam FIB; c) FIB cross-section; d) FIB cross-section of corroded copper [8-9].The application of FIB technology in biology has transformed nanoscale cellular imaging and manipulation. FIB can be used to prepare ultra-thin lamellae of biological samples for transmission electron microscopy (TEM), enabling high-resolution imaging of cellular structures [7]. Additionally, FIB technology is also integrated with Scanning Electron Microscopy (SEM) to improve imaging and sample preparation capabilities. Dual-beam systems that integrate FIB and SEM provide a robust platform for site-specific sample preparation and high-resolution imaging.This combination allows for precise material removal with FIB and detailed imaging with SEM, facilitating comprehensive analyses of microstructures and interfaces [8]. The FIB-SEM systems are especially valuable for preparing samples for TEM analysis and conducting three-dimensional reconstructions of micro and nanostructures [9-11].The versatility and precision of FIB technology have resulted in its widespread use across various fields, including semiconductor device fabrication and imaging. FIB technology is a fundamental to the progress of microfabrication and nanotechnology. Its capability to precisely manipulate materials at microscopic and nanoscopic scales has extensive applications in semiconductor manufacturing, materials science, and biological research. As FIB technology continues to advance, its applications are anticipated to grow further, driving innovations in various scientific and industrial sectors.Summarizing Questions1.How does the principle of ion-sample interaction in FIB systems enable both imaging and accurate material modification?2.In materials science and semiconductor fabrication, what are the main applications of FIB technology?3.How might FIB technology be combined with other analytical methods to improve the capabilities for nanoscale fabrication and characterization?References:1.Orloff, J., Utlaut, M., & Swanson, L. (2003). High Resolution Focused Ion Beams: FIB and its Applications. Springer2.Melngailis, J. (1987). Focused ion beam technology and applications. Journal of Vacuum Science & Technology B, 5, 469-495.3.Gamo, K. (1991). Focused ion beam technology. Vacuum, 42, 89-93.4.Banerjee, I., & Livengood, R. (1993). Applications of focused ion beams. Journal of The Electrochemical Society, 140, 183-188.5.Langford, R., Nellen, P., Giérak, J., & Fu, Y. (2007). Focused Ion Beam Micro- and Nanoengineering. Mrs Bulletin, 32, 417-423.6.Moore, D., Daniel, J., & Walker, J. (1997). Nano- and micro-technology applications of focused ion beam processing. Microelectronics Journal, 28, 465-473.7.Narayan, K., & Subramaniam, S. (2015). Focused ion beams in biology. Nature Methods, 12, 1021-1031.8.Young, R., & Moore, M. (2005). Dual-Beam (FIB-SEM) Systems. Springer, 247-268.9.Goldstein, J., Newbury, D., Michael, J., Ritchie, N., Scott, J. H., & Joy, D. (2018). Focused Ion Beam Applications in the SEM Laboratory.10.Grandfield, K., & Engqvist, H. (2012). Focused ion beam in the study of biomaterials and biological matter. Advances in Materials Science and Engineering, 2012, 841961.11.Bell, D. C. (2009). Scanning Electron Microscopy: Focused Ion Beam Applications. Springer.


Note: Electrochemistry Day 2024

Contributing Institute(s):
  1. Grundlagen der Elektrochemie (IET-1)
Research Program(s):
  1. 1223 - Batteries in Application (POF4-122) (POF4-122)
  2. DFG project G:(GEPRIS)493705276 - Kontrolle des Degradationsverhaltens von perowskitischen OER-Katalysatoren unter dynamischen Operationsbedingungen durch operando-Charakterisierung und systematischer Variation der d-Orbital-Bandstruktur (493705276) (493705276)

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 Record created 2025-01-10, last modified 2025-02-03



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