DFG project G:(GEPRIS)528378584

TRR 404: Zukunftsweisende Elektronik durch aktive Bauelemente in drei Dimensionen (Active-3D)

CoordinatorProfessor Dr.-Ing. Thomas Mikolajick
Grant period2025 -
Funding bodyDeutsche Forschungsgemeinschaft
 DFG
IdentifierG:(GEPRIS)528378584

   

Recent Publications

All known publications ...
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http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article - Online First  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;
The Influence of Residual Ion Drift During Programming of Chip‐Integrated Nanoscale HfO 2 ‐Based Memristive Devices
Advanced electronic materials 1, e00891 () [10.1002/aelm.202500891] DBCoverage  Download fulltext Files  Download fulltextFulltext BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article - Online First  ;  ;  ;
Two Coexisting Pathways to Volatility in Valence‐Change Memory Devices
Advanced functional materials 1, e77515 () [10.1002/adfm.77515] BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article  ;  ;  ;  ;  ;  ;  ;
Band-engineering in area-dependent InGaZnO(IGZO)-based memristive devices
Frontiers in nanotechnology 8, 14 () [10.3389/fnano.2026.1870683] OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Contribution to a conference proceedings  ;  ;  ;  ;  ;  ;  ;  ;  ;
Novel M-CNN design fostering gradual switching of InGaZnO(IGZO)-based memristive devices
2026 IEEE International Symposium on Circuits and Systems (ISCAS), ShanghaiShanghai, China, 24 May 2026 - 28 May 20262026-05-242026-05-28 IEEE 5 pp. () [10.1109/ISCAS66217.2026.11562042]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article  ;  ;  ;  ;  ;  ;
A Flexible and Energy‐Efficient Compute‐in‐Memory Accelerator for Kolmogorov–Arnold Networks
Advanced intelligent systems 8(5), e202501220 () [10.1002/aisy.202501220] OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article  ;  ;  ;  ;
Pr1-xCaxMnO3-based memristive heterostructures: Basic mechanisms and applications
Chemical reviews 125(13), 6156–6202 () [10.1021/acs.chemrev.4c00813] OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Conference Presentation (Other)  ;  ;  ;  ;
CMOS Integration of Area-dependent Pr0.7Ca0.3MnO3-based ReRAM-Devices
NRW NanoConference 2025, DortmundDortmund, Germany, 30 Sep 2025 - 1 Oct 20252025-09-302025-10-01 BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Conference Presentation (Other)  ;  ;  ;  ;
Physics-based Compact Modeling of BiFeO3 Memristive Devices
The 5th International Symposium on Emerging Memory and Computing (ISMC), SofiaSofia, Bulgaria, 3 Jun 2025 - 7 Jun 20252025-06-032025-06-07 BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Conference Presentation (Other)  ;  ;  ;  ;  ;
CMOS Integration of Area-dependent Pr0.7Ca0.3MnO3-based ReRAM-Devices Contributed talk
Memrisys 2025, EdinburgEdinburg, United Kingdom, 13 Oct 2025 - 16 Oct 20252025-10-132025-10-16 BibTeX | EndNote: XML, Text | RIS

All known publications ...
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 Datensatz erzeugt am 2025-02-08, letzte Änderung am 2025-02-08



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