Journal Article

FZJ-2025-01941

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Cutoff frequency increase of gate recessed AlGaN/GaN MISHFETs with amorphous AlN insulator

Kordoš, P. ; Gregušová, D. (Corresponding author) ; Mikulics, M.FZJ* ; Hardtdegen, H.FZJ*

2025
American Inst. of Physics New York, NY

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Please use a persistent id in citations: doi:10.1063/5.0252024  doi:10.34734/FZJ-2025-01941

Abstract: The RF performance of gate recessed MISHFET devices with an amorphous AlN layer was investigated by small-signal (S-parameter) measurements. They reveal current gain and unilateral power gain cutoff frequencies of 125 and 138 GHz, respectively. These device parameters were achieved for gate recessed MISHFET devices after applying a selective “step by step” etching T-gate formation procedure. The results indicate that the combination of an amorphous AlN dielectric layer with the gate recessed AlGaN/GaN MISHFET structures affects the RF performance in devices prepared for high frequency operation advantageously.

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Contributing Institute(s):

1. Materialwissenschaft u. Werkstofftechnik (ER-C-2)

Research Program(s):

1. 5353 - Understanding the Structural and Functional Behavior of Solid State Systems (POF4-535) (POF4-535)

Appears in the scientific report 2025

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