BMFTR 03ZU2106AA

Recent Publications

All known publications ...
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http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Poster (Invited) Taglietti, F.FZJ*
Understanding and Controlling Read Noise in VCM-based RRAM
2026Memrisys, DarmstadtDarmstadt, Germany, 5 Oct 2026 - 8 Oct 20262026-10-052026-10-08 BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Poster (After Call) Taglietti, F.FZJ* ; SChnieders, K. ; Storelli, D.FZJ* ; Wiefels, S.FZJ*
Denoising Strategy for VCM-based ReRAM Devices
2026European Symp. on Reliability of Electron Devices, Failure Physics and Analysis, ESREF, ViennaVienna, Austria, 21 Sep 2026 - 24 Sep 20262026-09-212026-09-24 BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Poster (After Call) Taglietti, F.FZJ* ; Schnieders, K. ; Chen, Y.FZJ* ; Storelli, D.FZJ* ; Wiefels, S.FZJ*
Denoising Strategy for VCM-based ReRAM Devices
2026International Conference on Neuromorphic Computing and Engineering, AachenAachen, Germany, 29 Jun 2026 - 2 Jul 20262026-06-292026-07-02 BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Contribution to a conference proceedings Jia, S.FZJ* ; Liu, X.FZJ* ; Waser, R. ; Wiefels, S.FZJ* ; Menzel, S.FZJ*
64-Point Radix-4 fast Fourier transform (FFT) Implementation in an 8 × 4 1T1R RRAM Array
20262026 IEEE International Symposium on Circuits and Systems (ISCAS), ShanghaiShanghai, China, 24 May 2026 - 28 May 20262026-05-242026-05-28 IEEE 5 pp. (2026) [10.1109/ISCAS66217.2026.11562995]2026   Files BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article - Online First Fa, Y. ; Buttberg, M. ; Ran, K.FZJ* ; Ahmad, R. W.FZJ* ; Braun, D. ; Völkel, L. ; Lee, J. ; Cruces, S. ; Macco, B. ; Canto, B. ; Lerch, H. ; Wahlbrink, T. ; Kalisch, H. ; Heuken, M. ; Vescan, A. ; Mayer, J.FZJ* ; Wang, Z. ; Valov, I.FZJ* ; Menzel, S.FZJ* ; Lemme, M. C.
Intermediate Resistive State in Wafer‐Scale Vertical MoS 2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications
Advanced functional materials 1, e26682 (2026) [10.1002/adfm.202526682]2026 BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article Cruces, S. ; Ganeriwala, M. D. ; Lee, J. ; Völkel, L. ; Braun, D. ; Grundmann, A. ; Ran, K.FZJ* ; González Marín, E. ; Kalisch, H. ; Heuken, M. ; Vescan, A. ; Mayer, J.FZJ* ; Godoy, A. ; Daus, A. (Corresponding author) ; Lemme, M. C. (Corresponding author)
Volatile MoS 2 Memristors with Lateral Silver Ion Migration for Artificial Neuron Applications
Small science 5(5), 2570023 (2025) [10.1002/smsc.202570023]2025   Files BibTeX | EndNote: XML, Text | RIS

All known publications ...
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