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Journal Article | FZJ-2025-02809 |
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2025
Cell Press
Maryland Heights, MO
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Please use a persistent id in citations: doi:10.1016/j.xcrp.2025.102658 doi:10.34734/FZJ-2025-02809
Abstract: Transparent passivating contact solar cells using hydrogenated n-type nanocrystalline silicon carbide (nc-SiC:H(n)) utilize a double-layer stack consisting of one passivation-optimized and one conduction-optimized nc-SiC:H(n) layer. This double-layer configuration limits the fill factor (FF) due to the passivating layer’s low electrical conductivity. This study enhances this structure by introducing a gradient layer that transitions from passivating-like to conducting-like properties. While replacing the passivating layer alone does not improve performance, when combining it with an ultrathin passivating seed layer, the gradient layer effectively balances voltage and FF trade-offs. This results in higher device voltage and FF. Microstructural analysis shows hydrogen content near the crystalline Si interface similar to the double-layer approach but with increased electrical conductivity earlier in the layer stack. These improvements boost both FF and open-circuit voltage by 0.6% absolute and over 4 mV, respectively.
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