Journal Article

FZJ-2025-03709

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Study of Resistive Switching Dynamics and Memory States Equilibria in Analog Filamentary Conductive‐Metal‐Oxide/HfO x ReRAM via Compact Modeling

Galetta, M. ; Falcone, D. F. ; Clerico, V. ; Choi, W. ; Menzel, S.FZJ* ; La Porta, A. ; Stecconi, T. ; Horst, F. ; Offrein, B. J. ; Bragaglia, V.

2025
Wiley-VCH Verlag GmbH & Co. KG Weinheim

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Please use a persistent id in citations: doi:10.1002/aelm.202500373

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Contributing Institute(s):

1. Elektronische Materialien (PGI-7)
2. JARA-FIT (JARA-FIT)

Research Program(s):

1. 5233 - Memristive Materials and Devices (POF4-523) (POF4-523)
2. BMBF 16ME0398K - Verbundprojekt: Neuro-inspirierte Technologien der künstlichen Intelligenz für die Elektronik der Zukunft - NEUROTEC II - (BMBF-16ME0398K) (BMBF-16ME0398K)

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Database coverage:
; ; ; Article Processing Charges ; Clarivate Analytics Master Journal List ; Current Contents - Physical, Chemical and Earth Sciences ; DEAL Wiley ; DOAJ Seal ; Essential Science Indicators ; Fees ; IF >= 5 ; JCR ; SCOPUS ; Science Citation Index Expanded ; Web of Science Core Collection

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