In situ Al2O3 atomic layer deposition on pristine (0 0 1) GaAs: interface chemistry and its implication on charge carrier recombination and Fermi level pinning

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In situ Al2O3 atomic layer deposition on pristine (0 0 1) GaAs: interface chemistry and its implication on charge carrier recombination and Fermi level pinning - FZJ-2025-05438

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